Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices

US9455198B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Hong Yu · Rexford, US
• Hongliang Shen · Ballston Lake, US
• Zhenyu Hu · Leonberg, DE
• Lun Zhao · Ballston Lake, US
• Richard J. Carter · Los Altos, US
• Xusheng Wu · Hsinchu, TW

Key dates

• Filing date: Apr 1, 2015
• Grant date: Sep 27, 2016
• Expiry date: Apr 1, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One illustrative method disclosed herein includes, among other things, removing at least one, but not all, of a plurality of first features in a first patterned mask layer so as to define a modified first patterned masking layer, wherein removed first feature(s) correspond to a location where a final isolation structure will be formed, performing an etching process though the modified first patterned masking layer to form an initial isolation trench in the substrate, and performing another etching process through the modified first patterned mask layer to thereby define a plurality of fin-formation trenches in the substrate and to extend a depth of the initial isolation trench so as to define a final isolation trench for the final isolation structure.