Etch chemistries for metallization in electronic devices
US9455283B2 · kind B2 · utility
2Cited by
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27Claims
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Key dates
| Filing date | Mar 3, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Mar 3, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.