Image sensor structure to reduce cross-talk and improve quantum efficiency
US9455288B2 · kind B2 · utility
4Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2012 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | May 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.