Flash cell and forming process thereof
US9455322B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Sep 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A flash cell forming process includes the following steps. A first gate is formed on a substrate. A first spacer is formed at a side of the first gate, where the first spacer includes a bottom part and a top part. The bottom part is removed, thereby an undercut being formed. A first selective gate is formed beside the first spacer and fills into the undercut. The present invention also provides a flash cell formed by said flash cell forming process. The flash cell includes a first gate, a first spacer and a first selective gate. The first gate is disposed on a substrate. The first spacer is disposed at a side of the first gate, where the first spacer has an undercut at a bottom part, and therefore exposes the substrate. The first selective gate is disposed beside the first spacer and extends into the undercut.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.