High power silicon carbide (SiC) PiN diodes having low forward voltage drops

US9455356B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Mrinal K. Das · Morrisville, US
• Brett Hull · Raleigh, US
• Joseph Sumakeris · Apex, US

Key dates

• Filing date: Feb 28, 2006
• Grant date: Sep 27, 2016
• Expiry date: Feb 28, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/045

Abstract

Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V.