Method of forming pattern
US9459535B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 5, 2013 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.