Quantum computing device spin transfer torque magnetic memory
US9460397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Sep 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic junction. The magnetic junction(s) include a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction(s) are configured to allow the free layer to be switched between stable magnetic states. The magnetic junction(s) are configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.