Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
US9460913B2 · kind B2 · utility
0Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.