Horizontal gate all around device isolation

US9460920B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shiyu Sun · Shanghai, CN
• Naomi Yoshida · Sunnyvale, US
• Theresa Kramer Guarini · San Jose, US
• Sung Won Jun · Seongnam-si, KR
• Benjamin Colombeau · San Jose, US
• Michael Chudzik · Mountain View, US

Key dates

• Filing date: Jun 30, 2015
• Grant date: Oct 4, 2016
• Expiry date: Jun 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6735

Abstract

Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.