Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
US9460932B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Nov 11, 2014 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Nov 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the sides of the feature and the process is repeated to grow a feature of desired thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.