Method to co-integrate oppositely strained semiconductor devices on a same substrate
US9460971B2 · kind B2 · utility
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37Claims
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Key dates
| Filing date | Dec 1, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Dec 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.