Self-aligned laterally extended strap for a dynamic random access memory cell
US9461050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2013 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Apr 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-aligned strap structure can be formed by forming trench capacitors and overlying trench top conductive material portions. End portions of fin mask structures overlie portions of the trench top conductive material portions. A dielectric spacer is formed around each end portions of the fin mask structure to cover additional areas of the trench top conductive material portions. An anisotropic etch is performed to recess portions of the trench top conductive material portions that are not covered by the fin mask structures or dielectric spacers. Conductive strap structures that are self-aligned to end portions of semiconductor fins are formed simultaneously with formation of the semiconductor fins. Access fin field effect transistors can be subsequently formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.