Patent · US Active

Standard cell library with DFM-optimized M0 cuts and V0 adjacencies

US9461065B1 · kind B1 · utility

9Cited by
4References
25Claims
0Family size

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Key dates

Filing dateApr 17, 2016
Grant dateOct 4, 2016
Priority date
Expiry dateApr 17, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/987
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A library of a DFM-improved standard logic cells that avoid pattern-degrading configurations in the M0 and/or V0 layer(s) is disclosed, along with wafers, chips and systems constructed from such cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.