Method for forming source/drain contact structure with chalcogen passivation
US9461134B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | May 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, an MIS-type contact structure is formed by passivating the semiconductor surface of a source/drain region with a chalcogen, and subsequently depositing an tunnel layer by first exposing the chalcogen-passivated surface to a metal-organic precursor. Subsequently, deposition of the tunnel layer continues to a desired thickness. Preferably, the metal-organic precursor is part of a first set of ALD precursors and a second set of ALD precursors, which include one or more metal or semimetal precursors, are subsequently used to continue the deposition. For example, the metal-organic precursor may be used to deposit a first portion of the tunnel layer, and an inorganic metal or inorganic semimetal precursor or a different organic metal or organic semimetal precursor may be used to deposit a second portion of the tunnel layer. A metal is subsequently deposited on the tunnel layer, e.g., to form a metal electrode or electrical contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.