Lateral-diffused metal oxide semiconductor device and fabricating method thereof
US9461166B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Apr 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.