Method for the formation of silicon and silicon-germanium fin structures for FinFET devices
US9461174B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 1, 2014 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A substrate layer formed of a first semiconductor material includes adjacent first and second regions. Fin structures are formed from the substrate layer in both the first and second regions. At least the side walls of the fin structures in the second region are covered with an epitaxially grown layer of second semiconductor material. A drive in process is performed to convert the fin structures in the second region from the first semiconductor material to the second semiconductor material. The first semiconductor material is, for example, silicon, and the second semiconductor material is, for example, silicon germanium or silicon carbide. The fin structures in the first region are provided for a FinFET of a first (for example, n-channel) conductivity type while the fin structures in the second region are provided for a FinFET of a second (for example, p-channel) conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.