Plasma processing apparatus and analyzing apparatus
US9464936B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Jan 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.