Manufacturing method of semiconductor device
US9466484B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Sep 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device is provided. The manufacturing method includes the following steps. A plurality of fin structures are formed in a first area and a second area of a substrate. A first density of the fin structures in the first area is lower than a second density of the fin structures in the second area. A gate dielectric layer is formed on the fin structures. An amorphous silicon layer is formed on the gate dielectric layer and the fin structures in the first area and the second area. Part of the amorphous silicon layer which is disposed in the first area is annealed to form a crystalline silicon layer by a laser. The crystalline silicon layer disposed in the first area and the amorphous silicon layer disposed in the second area are polished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.