Process for forming edge wordline implants adjacent edge wordlines
US9466489B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Dec 17, 2013 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Feb 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming tilted edge wordline implants is disclosed. The process includes forming a first drain implant in a substrate, forming a first tilted implant in a substrate adjacent a first edge wordline to supplement said first drain implant where the first tilted implant is provided at a tilt angle from a first direction and forming a second tilted implant in the substrate adjacent a second edge wordline to supplement another first drain implant where the second tilted implant is provided at a tilt angle from a second direction. A second drain implant is formed in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.