Tim Thurgate
13Patents
4h-index
31Co-inventors
56Inventor score
Filing activity: Sep 8, 1999 → Sep 25, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6567303B1 | Charge injection | Physics | 76 | Expired |
| US6287917A | Process for fabricating an MNOS flash memory device | Electricity | 29 | Expired |
| US6452840B1 | Feedback method to optimize electric field during channel erase of flash memory devices | Physics | 25 | Expired |
| US6355528B1 | Method to form narrow structure using double-damascene process | Emerging Cross-Sectional Technologies | 10 | Expired |
| US9564331B2 | Apparatus and method for rounded ONO formation in a flash memory device | Electricity | 0 | Active |
| US7803680B2 | Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications | Electricity | 0 | Active |
| US9276007B2 | System and method for manufacturing self-aligned STI with single poly | Electricity | 0 | Active |
| US8642441B1 | Self-aligned STI with single poly for manufacturing a flash memory device | Electricity | 0 | Active |
| US7943980B2 | Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductur applications | Electricity | 0 | Active |
| US6475816B1 | Method for measuring source and drain junction depth in silicon on insulator technology | Physics | 0 | Expired |
| US9466489B2 | Process for forming edge wordline implants adjacent edge wordlines | Electricity | 0 | Active |
| US7906395B2 | Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications | Electricity | 0 | Active |
| US10622370B1 | System and method for manufacturing self-aligned STI with single poly | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.