Line width roughness improvement with noble gas plasma
US9466502B2 · kind B2 · utility
3Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2016 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Feb 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a photoresist mask, ionizing the UV producing gas to produce UV rays to irradiate the photoresist mask, and etching the lines into the etch layer through the photoresist mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.