Patent · US Active

Semiconductor-on-insulator integrated circuit with back side gate

US9466536B2 · kind B2 · utility

22Cited by

50References

21Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Sinan Goktepeli · San Diego, US
Stuart B. Molin · Carlsbad, US
George Imthurn · San Diego, US

Key dates

Filing date	Aug 4, 2014
Grant date	Oct 11, 2016
Priority date	—
Expiry date	Aug 4, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods for manufacturing semiconductor-on-insulator (SOI) integrated circuits are disclosed. An SOI wafer is provided having a first surface and a second surface. The substrate of the SOI wafer forms the second surface. A transistor is formed in the semiconductor layer of the SOI wafer. A handle wafer is bonded to the first surface of the SOI wafer. The substrate layer is then removed to expose a back surface of the buried insulator of the SOI wafer. Conductive material is deposited on the SOI wafer that covers the back surface of the buried insulator. The conductive material is patterned to form a second gate electrode for the transistor on the back surface of the insulator.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.