Method of inspecting semiconductor device and method of fabricating semiconductor device using the same
US9466537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Jan 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.