Semiconductor device including spiral data path
US9472253B2 · kind B2 · utility
11Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Jan 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device disclosed in this disclosure includes a first terminal formed above a first surface of a semiconductor substrate, a second terminal formed above a second surface of the semiconductor substrate opposite to the first surface, a first through substrate via (TSV) penetrating the semiconductor substrate, and a first-in first-out (FIFO) circuit, wherein the first TSV and the FIFO circuit are coupled in series between the first terminal and the second terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.