Semiconductor arrangement including buried anodic oxide and manufacturing method
US9472395B2 · kind B2 · utility
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1References
22Claims
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Key dates
| Filing date | Jan 12, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Jan 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with a method of manufacturing a semiconductor arrangement, a first trench is formed into a semiconductor body from a first side. An anodic oxide structure is formed at a bottom side of the first trench by immersing the semiconductor body in an electrolyte and applying an anodizing voltage between the semiconductor body and an electrode in contact with the electrolyte.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.