Replacement metal gate FinFET

US9472407B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Hemanth Jagannathan · Niskayuna, US
• Sanjay C. Mehta · Niskayuna, US
• Junli Wang · Slingerlands, US
• Chun-Chen Yeh · Clifton Park, US
• Stefan Schmitz · Stuttgart, DE

Key dates

• Filing date: Jan 30, 2015
• Grant date: Oct 18, 2016
• Expiry date: Jan 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a field effect transistor device includes depositing a hardmask over a semiconductor layer depositing a metallic alloy layer over the hardmask, defining a semiconductor fin, depositing a dummy gate stack material layer conformally on exposed portions of the fin, patterning a dummy gate stack by removing portions of the dummy gate stack material using an etching process that selectively removes exposed portions of the dummy gate stack without appreciably removing portions of the metallic alloy layer, removing exposed portions of the metallic alloy layer, forming spacers adjacent to the dummy gate stack, forming source and drain regions on exposed regions of the semiconductor fin, removing the dummy gate stack, removing exposed portions of the metallic alloy layer, and forming a gate stack conformally over exposed portions of the insulator layer and the semiconductor fin.