Methods of surface interface engineering
US9472416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (NH4F) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.