Over-mold packaging for wide band-gap semiconductor devices
US9472480B2 · kind B2 · utility
1Cited by
18References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Aug 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.