Method for carrying out a conductive direct metal bonding
US9472530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Mar 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/83948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes a) Providing a first substrate covered by a metal layer and a second substrate covered by a metal layer, b) Bringing into direct contact the metal layers so as to form a bonding interface having metal material bridges separated by cavities which are fluidly connected to each other, d) Immersing the bonding interface in an oxidizing fluid so as to form a metal oxide which fills at least in part the cavities and metal/metal oxide/metal contact areas. A structure is also provided having a first substrate, a first metal layer, a second metal layer forming a bonding layer with the first metal layer, and a second substrate, the bonding interface having: metal material bridges separated by cavities, a metal oxide partially filling the cavities, and metal/metal oxide/metal contact areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.