Cascoded semiconductor devices
US9472549B2 · kind B2 · utility
9Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2013 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Dec 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/6875
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A cascoded power semiconductor circuit has a clamp circuit between the source and gate of a gallium nitride or silicon carbide FET to provide avalanche protection for the cascode MOSFET transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.