Semiconductor device and method for fabricating the same
US9472562B1 · kind B1 · utility
1Cited by
1References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 1, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Jun 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a substrate, a plurality of memory cells, a logic gate electrode and a high-voltage gate electrode. The substrate at least includes a memory area, a high-voltage area and a logic area. The memory cells are disposed in the memory area. The logic gate electrode is disposed on the logic area. The high-voltage gate electrode has a first portion and a second portion in contact with each other and stacked on the high-voltage area. The high-voltage gate electrode has a thickness substantially greater than that of the logic gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.