High endurance non-volatile storage
US9472758B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Nov 11, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The manufacturing of the non-volatile storage system includes depositing one or more layers of reversible resistance-switching material for a non-volatile storage element. Prior to operation, either during manufacturing or afterwards, a forming operation is performed. In one embodiment, the forming operation includes applying a forming voltage to the one or more layers of reversible resistance-switching material to form a first region that includes a resistor and a second region that can reversibly change resistance at a low current, the resistor is formed in response to the forming condition and is not deposited on the device. In some embodiments, programming the non-volatile storage element includes applying a programming voltage that increases in voltage over time at low current but does not exceed the final forming voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.