Apparatus and methods for qualifying HEMT FET devices
US9476933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | May 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method includes coupling a gate pulse generator to a gate terminal of a power transistor device under test, coupling a drain pulse generator to a drain terminal of the power transistor device under test; for a first set of test conditions, activating the drain pulse generator for each of the test conditions to apply a voltage pulse to the drain terminal, and for each of the test conditions, applying a voltage pulse to the gate terminal, the gate pulse rising only after the drain pulse falls below a predetermined threshold; for a second set of test conditions, applying a voltage pulse to the drain terminal, and applying a voltage pulse to the gate terminal, the drain pulse generator and the gate pulse generator both being active so that there is some overlap; and measuring the drain current into the power transistor device under test. An apparatus is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.