Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US9478402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Mar 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.