Method for hydrophobization of surface of silicon-containing film by ALD
US9478414B2 · kind B2 · utility
448Cited by
7References
6Claims
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Key dates
| Filing date | Sep 26, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Sep 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.