Methods for repairing low-k dielectrics using carbon plasma immersion
US9478437B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2011 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Oct 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.