Cobalt selectivity improvement in selective cobalt process sequence

US9478460B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Mei-Yee Shek · Mountain View, US
• Weifeng YE · San Jose, US
• Li-Qun Xia · Santa Clara, US
• Kang Sub Yim · Mountain View, US
• Kelvin Chan · San Ramon, US

Key dates

• Filing date: Aug 10, 2015
• Grant date: Oct 25, 2016
• Expiry date: Aug 10, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.