Alignment mark and method of formation
US9478480B2 · kind B2 · utility
2Cited by
44References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Nov 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.