Three dimensional memory device containing aluminum source contact via structure and method of making thereof
US9478495B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2015 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Oct 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low-stress contact via structure for a device employing an alternating stack of insulating layers and electrically conductive layers over a substrate can be formed by forming a trench extending to the substrate through the alternating stack. After formation of an insulating spacer and a diffusion barrier layer, a remaining volume of the trench can be filled with a combination of an aluminum portion and a non-metallic material portion to form a contact via structure. The non-metallic material portion can include a semiconductor material portion or a dielectric material portion, and can prevent reflow of the aluminum portion and generation of a cavity in subsequent thermal processes. If a semiconductor material portion is employed, the aluminum portion and the semiconductor material portion can exchange places during a metal induced crystallization anneal process of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.