Selective etching of reactor surfaces
US9481937B2 · kind B2 · utility
0Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Jan 5, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.