Chemical mechanical polishing method
US9484212B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Oct 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing method is provided comprising: providing a substrate, wherein the substrate comprises a silicon oxide and a silicon nitride; providing a polishing slurry; providing polishing pad, comprising: a polishing layer having a composition that is a reaction product of ingredients, comprising: a polyfunctional isocyanate and an amine initiated polyol curative; wherein the stoichiometric ratio of the amine initiated polyol curative to the polyfunctional isocyanate is selected to tune the removal rate selectivity of the polishing layer; creating dynamic contact between the polishing surface and the substrate; dispensing the polishing slurry on the polishing pad at or near the interface between the polishing surface and the substrate; and, removing at least some of the silicon oxide and the silicon nitride from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.