Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
US9484214B2 · kind B2 · utility
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6References
24Claims
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Key dates
| Filing date | Jun 2, 2014 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Dec 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.