Patent · US Active

Semiconductor devices and methods of forming thereof

US9484316B2 · kind B2 · utility

2Cited by

4References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Evelyn Napetschnig · Diex, AT
Ulrike Fastner · Villach, AT
Alexander Heinrich · Bad Abbach, DE
Thomas Fischer · Umkirch, DE

Key dates

Filing date	Nov 1, 2013
Grant date	Nov 1, 2016
Priority date	—
Expiry date	Jan 16, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/2064
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major surface of a substrate. The substrate includes device regions separated by kerf regions. The contact layer is disposed in the kerf region and the device regions. A structured solder layer is formed over the device regions. The contact layer is exposed at the kerf region after forming the structured solder layer. The contact layer and the substrate in the kerf regions are diced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.