Semiconductor device and manufacturing method thereof
US9484331B2 · kind B2 · utility
17Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2014 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.