Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
US9484413B2 · kind B2 · utility
6Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2014 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Jun 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.