Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
US9484533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can include a first layer of CMO including mobile oxygen ions, and a second layer of CMO formed in contact with the first layer of CMO to cooperate with the first layer of CMO to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. At least one layer of an insulating metal oxide that is an electrolyte to the mobile oxygen ions and configured as a tunnel barrier is formed in contact with the second layer of CMO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.