Semiconductor device and method for fabricating the same
US9490016B2 · kind B2 · utility
2Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Sep 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a floating gate on the substrate; a first silicon oxide layer between the floating gate and the substrate; a first tunnel oxide layer and a second tunnel oxide layer adjacent to two sides of the first silicon oxide layer; and a control gate on the floating gate. Preferably, the thickness of the first tunnel oxide layer and the second tunnel oxide layer is less than the thickness of the first silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.