Non-melt thin-wafer laser thermal annealing methods
US9490128B2 · kind B2 · utility
6Cited by
44References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2012 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Aug 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.