Method and apparatus for forming silicon film
US9490139B2 · kind B2 · utility
0Cited by
0References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.