Techniques for forming contacts for active BEOL
US9490164B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, a method for forming a contact to a device is provided which includes the steps of: forming a conformal etch stop layer surrounding the device; forming a dielectric layer over and covering the device; forming a contact trench in the dielectric layer, wherein the contact trench is present over the device and extends down to, or beyond, the etch stop layer; exposing a contact region of the device within the contact trench by selectively removing a portion of the etch stop layer covering a top portion of the device; and filling the contact trench with a conductive material to form the contact to the device. Other methods for forming a contact to a device and also to BEOL wiring are provided as are device contact structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.